N-channel MOSFET transistor, surface mount, 40V drain-source voltage, 30A continuous drain current, and 10.5mΩ drain-source on-resistance. Features include a 2.5V nominal gate-source voltage, 1.16nF input capacitance, and 41.7W maximum power dissipation. This RoHS compliant component operates from -55°C to 150°C and is packaged in a tape and reel for efficient assembly.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power4.8W
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Technical Specifications
Vishay SIR426DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 12.5MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.16nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41.7W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.8W |
| Radiation Hardening | No |
| Rds On Max | 10.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR426DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR426DP-T1-GE3 to view detailed technical specifications.
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