N-channel MOSFET with 25V drain-source voltage and 40A continuous drain current. Features low 5mR drain-to-source resistance and 50W maximum power dissipation. Designed for surface mount applications with a compact 5.89mm x 4.9mm x 1.04mm footprint. Offers fast switching characteristics with turn-on delay of 22ns and fall time of 9ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR436DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.715nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.6mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR436DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR436DP-T1-GE3 to view detailed technical specifications.
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