N-channel Power MOSFET featuring TrenchFET technology. 30V drain-source voltage and 18.9A continuous drain current. Enhancement mode operation with a 3V gate threshold voltage. Low on-resistance of 7.9 mOhm at 10V. 8-pin PowerPAK SO EP package.
PackagePowerPAK SO EP
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Technical Specifications
Vishay SiR462DP-T1-GE3 technical specifications.
General
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 18.9A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 7.9@10VmOhm |
| Typical Gate Charge @ Vgs | 20@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 20nC |
| Typical Input Capacitance @ Vds | 1155@15VpF |
| Maximum Power Dissipation | 4800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 260pF |
| Pin Count | 8 |
| Package/Case | PowerPAK SO EP |
| Package Family Name | SO |
Compliance
| RoHS | Yes with Exemption |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiR462DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiR462DP-T1-GE3 to view detailed technical specifications.
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