N-channel MOSFET transistor for surface mount applications. Features 40V drain-source voltage (Vdss) and 60A continuous drain current (ID). Offers low 2.2mR drain-source on-resistance (Rds On Max) at a nominal gate-source voltage (Vgs) of 2.5V. Designed with a 1.04mm height, 4.9mm length, and 5.89mm width in an 8-pin SOIC package. Maximum power dissipation is 104W, with operating temperatures from -55°C to 150°C.
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Vishay SIR470DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 2.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 2.3MR |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 5.66nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.3mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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