N-CHANNEL MOSFET, 12V Vdss, 60A continuous drain current, and 1.2mΩ Rds On at 10V. Features 104W max power dissipation and a TO-263-3 surface mount package. Operating temperature range from -55°C to 150°C, with a fall time of 54ns and turn-on delay of 42ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SIR494DP-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 1mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 6.9nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIR494DP-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
