N-CHANNEL MOSFET, 12V Vdss, 60A continuous drain current, and 1.2mΩ Rds On at 10V. Features 104W max power dissipation and a TO-263-3 surface mount package. Operating temperature range from -55°C to 150°C, with a fall time of 54ns and turn-on delay of 42ns.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR494DP-T1-GE3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
60A
Drain to Source Resistance
1mR
Drain to Source Voltage (Vdss)
12V
Fall Time
54ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
6.9nF
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.2mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
54ns
Turn-On Delay Time
42ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIR494DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR494DP-T1-GE3 to view detailed technical specifications.
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