This N-channel power MOSFET is rated for 100 V drain-to-source voltage and 110 A continuous drain current at TC = 25 °C. It uses a TrenchFET Gen V process and provides a maximum on-resistance of 4.1 mΩ at 10 V gate drive and 5.6 mΩ at 7.5 V. Typical total gate charge is 25.1 nC at 7.5 V, and the device is housed in a PowerPAK SO-8 package. The part is specified for -55 °C to +150 °C junction and storage temperature operation and is intended for synchronous rectification, primary-side switching, OR-ing and hot-swap switching, motor drive control, and battery management.
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Vishay SIR5102DP technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 110A |
| Pulsed Drain Current | 300A |
| On-Resistance Max @ 10 V | 0.0041Ω |
| On-Resistance Max @ 7.5 V | 0.0056Ω |
| Total Gate Charge Typ @ 7.5 V | 25.1nC |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 2 to 4V |
| Input Capacitance Typ | 2850pF |
| Output Capacitance Typ | 1050pF |
| Reverse Transfer Capacitance Typ | 9.2pF |
| Power Dissipation @ TC=25°C | 104W |
| Junction-to-Case Thermal Resistance Max | 1.2°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Body Diode Forward Voltage Typ | 0.74V |
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