This device is an N-channel 100 V drain-source power MOSFET in Vishay's TrenchFET Gen V family. It is supplied in a PowerPAK SO-8 package and is described for very low RDS x Qg figure-of-merit performance. Vishay also states that the device is tuned for a low RDS x Qoss figure-of-merit and that it is 100% Rg and UIS tested. Quality data for listed orderable versions shows lead-free Sn termination, halogen-free material status, RoHS compliance with exemptions, and unlimited floor life.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SiR512DP datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SiR512DP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 100V |
| Technology | TrenchFET Gen V |
| Package | PowerPAK SO-8 |
| RDS x Qg Figure of Merit | Very low |
| RDS x Qoss Figure of Merit | Tuned for low FOM |
| Rg and UIS Tested | 100% |
| Terminal Finish | Sn |
| Moisture Sensitivity | Floor Life-Unlimited |
| Automotive Grade | Non-Automotive |
| RoHS | Yes with exemptions |
| Halogen Free | Yes |
| Lead Free Termination | Termination is Lead Free |
Download the complete datasheet for Vishay SiR512DP to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
