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Vishay SIR642DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 2.4mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 4.155nF |
| Length | 6.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.01787oz |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIR642DP-T1-GE3 to view detailed technical specifications.
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