N-channel MOSFET transistor for surface mount applications. Features 60V drain-to-source voltage and 60A continuous drain current. Offers low 2.7mΩ drain-source on-resistance and 104W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in Tape and Reel for automated assembly.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR662DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
60A
Drain to Source Resistance
2.7mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
2.7mR
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.365nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2.7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SIR662DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR662DP-T1-GE3 to view detailed technical specifications.
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