N-channel MOSFET transistor for surface mount applications. Features 60V drain-to-source voltage and 60A continuous drain current. Offers low 2.7mΩ drain-source on-resistance and 104W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in Tape and Reel for automated assembly.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR662DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.365nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR662DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR662DP-T1-GE3 to view detailed technical specifications.
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