MOSFET 60V 4.8mOhm@10V 60A N-CH
Vishay SIR670DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.815nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.8mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
No datasheet is available for this part.
