N-channel MOSFET featuring 20V drain-source voltage and 50A continuous drain current. Offers low 1.9mR drain-to-source resistance and 2.3mR Rds On max. Operates with a 12V gate-to-source voltage and exhibits 27ns turn-on delay and fall times. This surface mount component, packaged on tape and reel, boasts a max power dissipation of 69W and an operating temperature range of -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR800DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
50A
Drain to Source Resistance
1.9mR
Drain to Source Voltage (Vdss)
20V
Fall Time
27ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
5.125nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
69W
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2.3mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
70ns
Turn-On Delay Time
27ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SIR800DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR800DP-T1-GE3 to view detailed technical specifications.
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