N-channel PowerPAK SO MOSFET with 40V Drain-Source Voltage and 21A Continuous Drain Current. Features low 19mΩ Drain-Source On-Resistance at a nominal 1.2V Gate-Source Voltage. Offers fast switching with 14ns Turn-On Delay and 11ns Fall Time. Operates from -55°C to 150°C with 15.6W Max Power Dissipation. Surface mountable, RoHS compliant, and supplied in tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR836DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 21A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 22.5MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 600pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR836DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR836DP-T1-GE3 to view detailed technical specifications.
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