N-channel Power MOSFET, 150V drain-source voltage, 35A continuous drain current. Features 8-pin PowerPAK SO surface-mount package with no leads, 4.9mm length, 5.89mm width, and 1.07mm maximum height. Offers 33mOhm maximum drain-source resistance at 10V, 33nC typical gate charge, and 2075pF typical input capacitance. Operates from -55°C to 150°C with 5400mW maximum power dissipation.
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Vishay SiR838DP-T1-GE3 technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package/Case | PowerPAK SO |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.89 |
| Package Height (mm) | 1.07(Max) |
| Seated Plane Height (mm) | 1.04 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 150V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 35A |
| Maximum Drain Source Resistance | 33@10VmOhm |
| Typical Gate Charge @ Vgs | 33@10VnC |
| Typical Gate Charge @ 10V | 33nC |
| Typical Input Capacitance @ Vds | 2075@75VpF |
| Maximum Power Dissipation | 5400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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