N-channel Power MOSFET, 150V drain-source voltage, 35A continuous drain current. Features 8-pin PowerPAK SO surface-mount package with no leads, 4.9mm length, 5.89mm width, and 1.07mm maximum height. Offers 33mOhm maximum drain-source resistance at 10V, 33nC typical gate charge, and 2075pF typical input capacitance. Operates from -55°C to 150°C with 5400mW maximum power dissipation.
PackagePowerPAK SO
MountingSurface Mount
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Technical Specifications
Vishay SiR838DP-T1-GE3 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package/Case
PowerPAK SO
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
5.89
Package Height (mm)
1.07(Max)
Seated Plane Height (mm)
1.04
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
150V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
35A
Maximum Drain Source Resistance
33@10VmOhm
Typical Gate Charge @ Vgs
33@10VnC
Typical Gate Charge @ 10V
33nC
Typical Input Capacitance @ Vds
2075@75VpF
Maximum Power Dissipation
5400mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SiR838DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiR838DP-T1-GE3 to view detailed technical specifications.
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