N-channel Power MOSFET featuring 100V drain-source voltage and 40A continuous drain current. Offers a low 14mΩ drain-source on-resistance and 44.5W maximum power dissipation. Designed for surface mounting in an 8-pin PowerPAK SO package, this component operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 12ns turn-on delay and 8ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Vishay SIR878ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 14mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.275nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR878ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR878ADP-T1-GE3 to view detailed technical specifications.
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