The SIR878DP-T1-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 44.5W and a maximum drain to source voltage of 100V. The device features a drain to source resistance of 14mR and a threshold voltage of 1.2V. It is RoHS compliant and available in tape and reel packaging.
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Vishay SIR878DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.25nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Weight | 0.01787oz |
| RoHS | Compliant |
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