The SIR880DP-T1-GE3 is a 2-channel N-CHANNEL MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 104W and a continuous drain current of 60A. The device is packaged in a SMALL OUTLINE, R-PDSO-C5 package and is RoHS compliant. It is suitable for surface mount applications and has a nominal Vgs of 1.2V.
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Vishay SIR880DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 5.9mR |
| Drain to Source Voltage (Vdss) | 80V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.44nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Weight | 0.01787oz |
| RoHS | Compliant |
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