N-channel MOSFET transistor featuring 100V drain-source voltage and 60A continuous drain current. Offers a low 8.7mΩ drain-source on-resistance and 83W maximum power dissipation. Designed for surface mounting in an 8-pin PowerPAK SO package, this component boasts fast switching speeds with a 9ns fall time and 11ns turn-on delay. Operating temperature range spans from -55°C to 150°C, with RoHS compliance and lead-free construction.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SIR882ADP-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SIR882ADP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 8.7mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8.7mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.975nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.4W |
| Radiation Hardening | No |
| Rds On Max | 8.7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIR882ADP-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
