N-channel MOSFET transistor featuring 100V drain-source voltage and 60A continuous drain current. Offers a low 8.7mΩ drain-source on-resistance and 83W maximum power dissipation. Designed for surface mounting in an 8-pin PowerPAK SO package, this component boasts fast switching speeds with a 9ns fall time and 11ns turn-on delay. Operating temperature range spans from -55°C to 150°C, with RoHS compliance and lead-free construction.
MountingSurface Mount
PolarityN-CHANNEL
Power5.4W
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Technical Specifications
Vishay SIR882ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 8.7mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8.7mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.975nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.4W |
| Radiation Hardening | No |
| Rds On Max | 8.7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR882ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR882ADP-T1-GE3 to view detailed technical specifications.
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