N-channel MOSFET, 30V drain-source breakdown voltage, 60A continuous drain current, and 1mR drain-source on-resistance. Features a 1.1V threshold voltage, 11.7nF input capacitance, and 104W maximum power dissipation. Packaged in SOIC for surface mounting, this component offers fast switching with 11ns fall time and 18ns turn-on delay. Operates across a -55°C to 150°C temperature range and is RoHS compliant.
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Vishay SIRA00DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.042inch |
| Input Capacitance | 11.7nF |
| Lead Free | Lead Free |
| Length | 0.235inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 104W |
| Radiation Hardening | No |
| Rds On Max | 1mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.01787oz |
| Width | 0.197inch |
| RoHS | Compliant |
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