N-Channel MOSFET featuring 30V drain-source breakdown voltage and 50A continuous drain current. Offers low 2mΩ drain-source resistance at 10V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 50W. This surface-mount component boasts fast switching characteristics with a 16ns fall time and 31ns turn-on delay. Packaged on tape and reel, it is RoHS compliant.
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Vishay SIRA02DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.042inch |
| Input Capacitance | 6.15nF |
| Length | 0.235inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 32W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 31ns |
| Weight | 0.01787oz |
| Width | 0.197inch |
| RoHS | Compliant |
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