N-channel MOSFET with 30V drain-source breakdown voltage and 40A continuous drain current. Features low 2.15mΩ drain-source on-resistance at 10V gate-source voltage. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 62.5W. This surface-mount component utilizes TrenchFET® technology and is packaged in SOIC for tape and reel delivery.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
Quick Jump:
Technical Specifications
Vishay SIRA04DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.15mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.042inch |
| Input Capacitance | 3.595nF |
| Lead Free | Lead Free |
| Length | 0.235inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.7W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 62.5W |
| Radiation Hardening | No |
| Rds On Max | 2.15mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 24ns |
| Weight | 0.01787oz |
| Width | 0.197inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIRA04DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIRA04DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
