N-channel MOSFET with 30V drain-source breakdown voltage and 40A continuous drain current. Features low 2.15mΩ drain-source on-resistance at 10V gate-source voltage. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 62.5W. This surface-mount component utilizes TrenchFET® technology and is packaged in SOIC for tape and reel delivery.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
Vishay SIRA04DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.15mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
2.15mR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
0.042inch
Input Capacitance
3.595nF
Lead Free
Lead Free
Length
0.235inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
27.7W
Mount
Surface Mount
Nominal Vgs
1.1V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
62.5W
Radiation Hardening
No
Rds On Max
2.15mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.1V
Turn-Off Delay Time
30ns
Turn-On Delay Time
24ns
Weight
0.01787oz
Width
0.197inch
Compliance
RoHS
Compliant
Datasheet
Vishay SIRA04DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIRA04DP-T1-GE3 to view detailed technical specifications.
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