N-channel MOSFET with 30V drain-source breakdown voltage and 40A continuous drain current. Features low 2.15mΩ drain-source on-resistance at 10V gate-source voltage. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 62.5W. This surface-mount component utilizes TrenchFET® technology and is packaged in SOIC for tape and reel delivery.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SIRA04DP-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SIRA04DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.15mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.042inch |
| Input Capacitance | 3.595nF |
| Lead Free | Lead Free |
| Length | 0.235inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.7W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 62.5W |
| Radiation Hardening | No |
| Rds On Max | 2.15mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 24ns |
| Weight | 0.01787oz |
| Width | 0.197inch |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIRA04DP-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
