N-CHANNEL MOSFET, 30V Vdss, 35A continuous drain current, and 5.6mR Rds On. This surface mount component features a 1.2V threshold voltage and 52W max power dissipation. Operating temperature range is -55°C to 150°C. Packaged in SOIC for tape and reel deployment.
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Vishay SIS330DN-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 5.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 1.3nF |
| Length | 3.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 16ns |
| Width | 3.15mm |
| RoHS | Compliant |
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