N-CHANNEL MOSFET, 30V Vdss, 35A continuous drain current, and 5.6mR Rds On. This surface mount component features a 1.2V threshold voltage and 52W max power dissipation. Operating temperature range is -55°C to 150°C. Packaged in SOIC for tape and reel deployment.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIS330DN-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
35A
Drain to Source Resistance
5.6mR
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
20V
Height
1.12mm
Input Capacitance
1.3nF
Length
3.15mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
5.6mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.2V
Turn-Off Delay Time
19ns
Turn-On Delay Time
16ns
Width
3.15mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIS330DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS330DN-T1-GE3 to view detailed technical specifications.
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