N-channel MOSFET, 30V Vdss, 12A continuous drain current, and 24mR Rds On Max. Features a 1V gate threshold voltage and 15.6W max power dissipation. Surface mountable in an 8-pin PowerPAK 1212 package, this RoHS compliant component offers fast switching with 15ns turn-on and turn-off delay times. Operating temperature range from -55°C to 150°C.
Sign in to ask questions about the Vishay SIS412DN-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SIS412DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 24MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 435pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 15ns |
| Width | 3.05mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIS412DN-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
