N-channel MOSFET, 30V Vdss, 12A continuous drain current, and 24mR Rds On Max. Features a 1V gate threshold voltage and 15.6W max power dissipation. Surface mountable in an 8-pin PowerPAK 1212 package, this RoHS compliant component offers fast switching with 15ns turn-on and turn-off delay times. Operating temperature range from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIS412DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
12A
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
24MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
435pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
15.6W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
24mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
15ns
Turn-On Delay Time
15ns
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIS412DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS412DN-T1-GE3 to view detailed technical specifications.
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