P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a continuous drain current of -35A and a drain-to-source breakdown voltage of -40V. Offers a low drain-to-source resistance of 16mΩ (typical) and a maximum of 11.7mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 52W. This surface mount component is packaged on tape and reel and is RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
Power52W
Quick Jump:
Technical Specifications
Vishay SIS443DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
-35A
Drain to Source Breakdown Voltage
-40V
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
40V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.37nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
52W
Radiation Hardening
No
Rds On Max
11.7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
48ns
Compliance
RoHS
Compliant
Datasheet
Vishay SIS443DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS443DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
