P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a continuous drain current of -35A and a drain-to-source breakdown voltage of -40V. Offers a low drain-to-source resistance of 16mΩ (typical) and a maximum of 11.7mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 52W. This surface mount component is packaged on tape and reel and is RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
Power52W
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Technical Specifications
Vishay SIS443DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -35A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.37nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 52W |
| Radiation Hardening | No |
| Rds On Max | 11.7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 48ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIS443DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS443DN-T1-GE3 to view detailed technical specifications.
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