N-CHANNEL Power MOSFET featuring 80V Drain-Source Voltage (Vdss) and 30A Continuous Drain Current (ID). This surface mount component offers a low Drain-Source On Resistance (Rds On) of 19.5mR at a 10V Gate-Source Voltage (Vgs). With a maximum power dissipation of 52W and operating temperatures from -55°C to 150°C, it is suitable for general-purpose power applications. The component boasts fast switching speeds with turn-on and turn-off delay times of 9ns and 15ns respectively.
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Vishay SIS468DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 19.5mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 19.5MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 19.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| Width | 3.4mm |
| RoHS | Compliant |
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