N-CHANNEL Power MOSFET featuring 80V Drain-Source Voltage (Vdss) and 30A Continuous Drain Current (ID). This surface mount component offers a low Drain-Source On Resistance (Rds On) of 19.5mR at a 10V Gate-Source Voltage (Vgs). With a maximum power dissipation of 52W and operating temperatures from -55°C to 150°C, it is suitable for general-purpose power applications. The component boasts fast switching speeds with turn-on and turn-off delay times of 9ns and 15ns respectively.
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SIS468DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
30A
Drain to Source Resistance
19.5mR
Drain to Source Voltage (Vdss)
80V
Drain-source On Resistance-Max
19.5MR
Gate to Source Voltage (Vgs)
20V
Height
1.12mm
Input Capacitance
780pF
Lead Free
Lead Free
Length
3.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
19.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
15ns
Turn-On Delay Time
9ns
Width
3.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIS468DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS468DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
