N-channel MOSFET with 30V drain-source breakdown voltage and 2.5mΩ maximum drain-source on-resistance at 10V gate-source voltage. Features 40A continuous drain current and 52W maximum power dissipation. Designed for surface mount applications with a compact 0.124 x 0.124 inch footprint and 0.042 inch height. Operates across a wide temperature range from -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SIS476DN-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SIS476DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.5mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 2.3V |
| Height | 0.042inch |
| Input Capacitance | 3.595nF |
| Lead Free | Lead Free |
| Length | 0.124inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 52W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 24ns |
| Width | 0.124inch |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIS476DN-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
