N-channel MOSFET with 30V drain-source breakdown voltage and 2.5mΩ maximum drain-source on-resistance at 10V gate-source voltage. Features 40A continuous drain current and 52W maximum power dissipation. Designed for surface mount applications with a compact 0.124 x 0.124 inch footprint and 0.042 inch height. Operates across a wide temperature range from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power52W
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Technical Specifications
Vishay SIS476DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
2.5mR
Fall Time
16ns
Gate to Source Voltage (Vgs)
2.3V
Height
0.042inch
Input Capacitance
3.595nF
Lead Free
Lead Free
Length
0.124inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
52W
Radiation Hardening
No
Rds On Max
2.5mR
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
30ns
Turn-On Delay Time
24ns
Width
0.124inch
Compliance
RoHS
Compliant
Datasheet
Vishay SIS476DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS476DN-T1-GE3 to view detailed technical specifications.
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