This device is an N-channel 150 V TrenchFET Gen V power MOSFET in the PowerPAK 1212-8 package. It is specified for up to 18 A continuous drain current and features a maximum on-resistance of 55.5 mΩ at 10 V gate drive and 62.4 mΩ at 7.5 V gate drive. Typical total gate charge is 5.8 nC at 7.5 V drive, supporting efficient switching in primary-side switches, DC/DC converters, and motor drive control. The device is rated for -55 °C to +150 °C operating and storage temperature range. The orderable version is lead-free and halogen-free.
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Vishay SiS5712DN technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 18A |
| On-Resistance Max @ VGS=10 V | 0.0555Ohm |
| On-Resistance Max @ VGS=7.5 V | 0.0624Ohm |
| Total Gate Charge Typ @ VGS=7.5 V | 5.8nC |
| Input Capacitance Typ | 500pF |
| Output Capacitance Typ | 70pF |
| Reverse Transfer Capacitance Typ | 6pF |
| Gate Resistance Typ | 0.9Ohm |
| Body Diode Voltage Typ | 0.8V |
| Operating Junction Temperature Range | -55 to +150°C |
| Thermal Resistance Junction-to-Ambient Max | 34°C/W |
| Thermal Resistance Junction-to-Case Max | 3.2°C/W |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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