This N-CHANNEL MOSFET has a continuous drain current of 18A and a drain to source voltage of 30V. It features a drain to source resistance of 11mR and a maximum power dissipation of 27.7W. The device is packaged in a tape and reel format with 3000 pieces per reel. It is RoHS compliant and suitable for use in a variety of applications.
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| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Power Dissipation | 27.7W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Series | SIS |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SiS780DN-T1-GE3 to view detailed technical specifications.
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