N-channel Power MOSFET with 100V drain-source voltage and 30A continuous drain current. Features TrenchFET process technology for low on-resistance, specified at 23.5 mOhm at 10V. This single quad drain triple source transistor is housed in an 8-pin PowerPAK 1212 lead-frame SMT package with a 3.05mm x 3.05mm footprint. Operating temperature range is -55°C to 150°C.
PackagePowerPAK 1212
MountingSurface Mount
Quick Jump:
Technical Specifications
Vishay SIS890DN-T1-GE3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
PowerPAK 1212
Package/Case
PowerPAK 1212
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.05
Package Width (mm)
3.05
Package Height (mm)
1.07(Max)
Seated Plane Height (mm)
1.04
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TrenchFET
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
30A
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
23.5@10VmOhm
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
19.1nC
Typical Input Capacitance @ Vds
802@50VpF
Maximum Power Dissipation
3700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SIS890DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS890DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.