N-channel Power MOSFET with 100V drain-source voltage and 30A continuous drain current. Features TrenchFET process technology for low on-resistance, specified at 23.5 mOhm at 10V. This single quad drain triple source transistor is housed in an 8-pin PowerPAK 1212 lead-frame SMT package with a 3.05mm x 3.05mm footprint. Operating temperature range is -55°C to 150°C.
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Vishay SIS890DN-T1-GE3 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | PowerPAK 1212 |
| Package/Case | PowerPAK 1212 |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 3.05 |
| Package Height (mm) | 1.07(Max) |
| Seated Plane Height (mm) | 1.04 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 30A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 23.5@10VmOhm |
| Typical Gate Charge @ Vgs | 19.1@10V|[email protected]|[email protected]nC |
| Typical Gate Charge @ 10V | 19.1nC |
| Typical Input Capacitance @ Vds | 802@50VpF |
| Maximum Power Dissipation | 3700mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 18612 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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