N-channel Power MOSFET featuring TrenchFET process technology. This single element device offers a 100V drain-source voltage and 28A continuous drain current. Housed in an 8-pin PowerPAK 1212 lead-frame SMT package with no leads, it boasts a low seated plane height of 1.04mm. Key electrical characteristics include a maximum drain-source resistance of 33mΩ at 10V and a typical gate charge of 12.8nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackagePowerPAK 1212
MountingSurface Mount
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Technical Specifications
Vishay SIS892ADN-T1-GE3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | PowerPAK 1212 |
| Package/Case | PowerPAK 1212 |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 3.05 |
| Package Height (mm) | 1.07(Max) |
| Seated Plane Height (mm) | 1.04 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 28A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 33@10VmOhm |
| Typical Gate Charge @ Vgs | 12.8@10V|[email protected]|[email protected]nC |
| Typical Gate Charge @ 10V | 12.8nC |
| Typical Input Capacitance @ Vds | 550@50VpF |
| Maximum Power Dissipation | 3700mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SIS892ADN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS892ADN-T1-GE3 to view detailed technical specifications.
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