N-channel Power MOSFET featuring TrenchFET process technology. This single element device offers a 100V drain-source voltage and 28A continuous drain current. Housed in an 8-pin PowerPAK 1212 lead-frame SMT package with no leads, it boasts a low seated plane height of 1.04mm. Key electrical characteristics include a maximum drain-source resistance of 33mΩ at 10V and a typical gate charge of 12.8nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackagePowerPAK 1212
MountingSurface Mount
Quick Jump:
Technical Specifications
Vishay SIS892ADN-T1-GE3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
PowerPAK 1212
Package/Case
PowerPAK 1212
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.05
Package Width (mm)
3.05
Package Height (mm)
1.07(Max)
Seated Plane Height (mm)
1.04
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TrenchFET
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
28A
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
33@10VmOhm
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
12.8nC
Typical Input Capacitance @ Vds
550@50VpF
Maximum Power Dissipation
3700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SIS892ADN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS892ADN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.