N-channel MOSFET with 100V drain-source voltage and 30A continuous drain current. Features low 29mΩ drain-to-source resistance and 1.2V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 52W. Surface mountable in an 8-pin PowerPAK 1212-8 package, supplied on tape and reel.
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Vishay SIS892DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 611pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.7W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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