N-channel MOSFET with 100V drain-source voltage and 30A continuous drain current. Features low 29mΩ drain-to-source resistance and 1.2V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 52W. Surface mountable in an 8-pin PowerPAK 1212-8 package, supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power3.7W
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Technical Specifications
Vishay SIS892DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
30A
Drain to Source Resistance
29mR
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Height
1.12mm
Input Capacitance
611pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.7W
Radiation Hardening
No
Rds On Max
29mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.2V
Turn-Off Delay Time
17ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Vishay SIS892DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS892DN-T1-GE3 to view detailed technical specifications.
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