The SIS990DN-T1-GE3 is a 2-channel N-channel TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 25W and is RoHS compliant. The device is packaged in a small outline S-PDSO-C6 package and is suitable for surface mount applications.
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Vishay SIS990DN-T1-GE3 technical specifications.
| Package/Case | 100 |
| Continuous Drain Current (ID) | 12.1A |
| Drain to Source Resistance | 86mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 250pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
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