N-channel MOSFET for general-purpose power applications. Features 30V drain-to-source breakdown voltage and 30A continuous drain current. Offers low 3.7mΩ drain-to-source resistance and 39W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Surface mountable with a compact 0.124 x 0.124 inch footprint and 0.042 inch height. RoHS compliant and packaged on tape and reel.
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Vishay SISA10DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 2.2V |
| Height | 0.042inch |
| Input Capacitance | 2.425nF |
| Length | 0.124inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 39W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 20ns |
| Width | 0.124inch |
| RoHS | Compliant |
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