VISHAY

SISA10DN-T1-GE3

Datasheet

30V 30A N-CH MOSFET, 3.7mR Rds(on), 39W PD, SMD

Vishay

SISA10DN-T1-GE3

Name: SISA10DN-T1-GE3 Vishay
Brand: Vishay
SKU: SISA10DN-T1-GE3

30V 30A N-CH MOSFET, 3.7mR Rds(on), 39W PD, SMD

N-channel MOSFET for general-purpose power applications. Features 30V drain-to-source breakdown voltage and 30A continuous drain current. Offers low 3.7mΩ drain-to-source resistance and 39W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Surface mountable with a compact 0.124 x 0.124 inch footprint and 0.042 inch height. RoHS compliant and packaged on tape and reel.

MountingSurface Mount

PolarityN-CHANNEL

Power39W

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Technical Specifications

Vishay SISA10DN-T1-GE3 technical specifications.

General

Continuous Drain Current (ID)	30A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	3.7mR
Drain to Source Voltage (Vdss)	30V
Fall Time	20ns
Gate to Source Voltage (Vgs)	2.2V
Height	0.042inch
Input Capacitance	2.425nF
Length	0.124inch
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	39W
Mount	Surface Mount
Number of Channels	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Polarization	N
Power Dissipation	39W
Radiation Hardening	No
Rds On Max	3.7mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	1.1V
Turn-Off Delay Time	27ns
Turn-On Delay Time	20ns
Width	0.124inch