N-channel MOSFET for general-purpose power applications. Features 30V drain-to-source breakdown voltage and 30A continuous drain current. Offers low 3.7mΩ drain-to-source resistance and 39W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Surface mountable with a compact 0.124 x 0.124 inch footprint and 0.042 inch height. RoHS compliant and packaged on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power39W
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Technical Specifications
Vishay SISA10DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.7mR
Drain to Source Voltage (Vdss)
30V
Fall Time
20ns
Gate to Source Voltage (Vgs)
2.2V
Height
0.042inch
Input Capacitance
2.425nF
Length
0.124inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
39W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
39W
Radiation Hardening
No
Rds On Max
3.7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.1V
Turn-Off Delay Time
27ns
Turn-On Delay Time
20ns
Width
0.124inch
Compliance
RoHS
Compliant
Datasheet
Vishay SISA10DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SISA10DN-T1-GE3 to view detailed technical specifications.
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