This N-channel MOSFET is rated for 30 V drain-to-source voltage and uses Vishay Siliconix TrenchFET Gen IV technology. It supports up to 87 A continuous drain current at TC = 25 °C and 150 A pulsed drain current. Maximum on-resistance is 4.3 mΩ at 10 V gate drive and 6.0 mΩ at 4.5 V gate drive. Typical total gate charge is 21 nC at VDS = 15 V and ID = 10 A. The device is offered in a PowerPAK 1212-8PT package for high power density DC/DC converters, synchronous rectification, VRMs, and battery protection, with a junction and storage temperature range of -55 °C to +150 °C.
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Vishay SiSA12BDN technical specifications.
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | +20 / -16V |
| Continuous Drain Current (TC=25°C) | 87A |
| Continuous Drain Current (TC=70°C) | 70A |
| Continuous Drain Current (TA=25°C) | 24A |
| Pulsed Drain Current | 150A |
| On-Resistance Max @ VGS=10V | 4.3mΩ |
| On-Resistance Max @ VGS=4.5V | 6.0mΩ |
| Total Gate Charge Typ | 21nC |
| Input Capacitance Typ | 1470pF |
| Power Dissipation Max (TC=25°C) | 52W |
| Junction-to-Case Thermal Resistance Typ | 1.9°C/W |
| Operating Junction and Storage Temperature Range | -55 to +150°C |
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