The SISA18ADN-T1-GE3 is a N-CHANNEL TrenchFET MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a drain to source breakdown voltage of 30V and a continuous drain current of 38.3A. The device features a maximum power dissipation of 19.8W and a threshold voltage of 1.2V. It is packaged in a SMALL OUTLINE, S-PDSO-C5 package and is RoHS compliant.
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Vishay SISA18ADN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 38.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | -16V |
| Input Capacitance | 1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19.8W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 19.8W |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 15ns |
| RoHS | Compliant |
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