The SISA66DN-T1-GE3 is a TrenchFET Gen IV MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 40A and a drain to source voltage of 30V. The device is RoHS compliant and features a maximum power dissipation of 52W. It is packaged in a tape and reel format for surface mount applications.
Vishay SISA66DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 3.014nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 2.3mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® Gen IV |
| RoHS | Compliant |
No datasheet is available for this part.
