SiSH108DN is a single N-channel fast-switching MOSFET rated for 20 V drain-source voltage in a PowerPAK 1212-8SH package. It supports 22 A continuous drain current at 25 °C and has a maximum on-resistance of 4.9 mΩ at 10 V gate drive or 6.1 mΩ at 4.5 V. Typical total gate charge is 20 nC, and the device is specified for synchronous rectification, point-of-load converters, protection devices, and hot-swap functions. It is lead-free and halogen-free and is rated for a -55 °C to +150 °C junction and storage temperature range.
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Vishay SiSH108DN technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 22A |
| Pulsed Drain Current | 60A |
| Gate-Source Voltage | ±16V |
| On-Resistance Max at VGS=10 V | 4.9mΩ |
| On-Resistance Max at VGS=4.5 V | 6.1mΩ |
| Total Gate Charge Typ | 20nC |
| Gate Threshold Voltage | 1 to 2V |
| Maximum Power Dissipation | 3.8W |
| Junction-to-Ambient Thermal Resistance Max | 33°C/W |
| Junction-to-Case Thermal Resistance Max | 2.4°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Package Size | 3.3 x 3.3mm |
| Configuration | Single |
| Lead-free | Yes |
| Halogen-free | Yes |
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