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Technical Specifications
Vishay SISS23DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
27A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
50ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
8.84nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
57W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
4.8W
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
900mV
Turn-Off Delay Time
140ns
Compliance
RoHS
Compliant
Datasheet
Vishay SISS23DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SISS23DN-T1-GE3 to view detailed technical specifications.
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