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Vishay SISS23DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 27A |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 8.84nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 4.8W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 900mV |
| Turn-Off Delay Time | 140ns |
| RoHS | Compliant |
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