SISS32ADN-T1-GE3

N-channel Power MOSFET featuring low on-resistance for efficient power switching applications. Designed for high current density with a maximum continuous drain current of 100 A and a drain-source voltage rating of 30 V. Offers a low gate charge for fast switching speeds and a low threshold voltage for easy driveability. Ideal for DC-DC converters, power management, and motor control circuits.