This N-channel power MOSFET is rated for 150 V drain-source voltage and 26.2 A continuous drain current at a case temperature of 25 °C. It uses a Gen V TrenchFET process and is optimized for low RDS x Qg and RDS x Qoss figures of merit, with maximum on-resistance of 31.5 mΩ at 10 V gate drive and 37 mΩ at 7.5 V. Typical total gate charge is 7.7 nC at 7.5 V, and the device is housed in a PowerPAK 1212-8S package. Typical applications include synchronous rectification, primary-side switching, DC/DC converters, OR-ing and hot-swap switching, power supplies, motor drive control, and battery management.
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Vishay SiSS5710DN technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 26.2A |
| Gate-Source Voltage | ±20V |
| Pulsed Drain Current | 70A |
| Drain-Source On-Resistance Max @ VGS=10 V | 0.0315Ω |
| Drain-Source On-Resistance Max @ VGS=7.5 V | 0.037Ω |
| Total Gate Charge Typ @ VGS=7.5 V | 7.7nC |
| Total Gate Charge Typ @ VGS=10 V | 10nC |
| Gate Threshold Voltage | 2 to 4V |
| Input Capacitance Typ | 770pF |
| Output Capacitance Typ | 105pF |
| Reverse Transfer Capacitance Typ | 6.8pF |
| Thermal Resistance Junction-to-Case Max | 2.3°C/W |
| Thermal Resistance Junction-to-Ambient Max | 30°C/W |
| Configuration | Single |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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