Dual N-channel MOSFET, 30V Vdss, featuring low Rds(on) of 9mΩ at 10V. This surface-mount component offers a continuous drain current of 28A and a maximum power dissipation of 31W. Designed for efficient switching, it exhibits a fall time of 40ns and operates across a temperature range of -55°C to 150°C. Packaged in tape and reel, this lead-free, RoHS-compliant device is ideal for power management applications.
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Vishay SIZ300DT-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 28A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 40ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Width | 3mm |
| RoHS | Compliant |
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