N-channel Power MOSFET featuring a dual configuration within a 6-pin PowerPAIR package. This surface-mount component offers a maximum drain-source voltage of 30V and a continuous drain current of 13.8A or 14A per channel. Key electrical characteristics include a low drain-source on-resistance of 12mΩ at 10V and typical gate charge values of 6.8nC at 4.5V and 14nC at 10V. Operating across a temperature range of -55°C to 150°C, this device is designed for efficient power management applications.
PackagePowerPAIR
MountingSurface Mount
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Technical Specifications
Vishay SiZ702DT-T1-GE3 technical specifications.
General
| Package Family Name | PowerPAIR |
| Package/Case | PowerPAIR |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 3.73 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 13.8@Channel 1|14@Channel 2A |
| Maximum Drain Source Resistance | 12@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|14@10VnC |
| Typical Gate Charge @ 10V | 14nC |
| Typical Input Capacitance @ Vds | 790@15VpF |
| Maximum Power Dissipation | 3900@Channel 1|4500@Channel 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiZ702DT-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiZ702DT-T1-GE3 to view detailed technical specifications.
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