N-Channel MOSFET featuring 25V drain-to-source voltage and 35A continuous drain current. Offers low 2.9mΩ drain-to-source resistance and 48W maximum power dissipation. This surface mount component operates from -55°C to 150°C with a 1V threshold voltage. Includes 2 N-Channel FETs with a 10ns fall time and 890pF input capacitance.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SIZ728DT-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SIZ728DT-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 2.9mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 890pF |
| Lead Free | Lead Free |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Width | 3.73mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIZ728DT-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
