Dual N-Channel MOSFET, 30V Vdss, 35A continuous drain current. Features low 3.8mR drain-to-source resistance and 48W max power dissipation. Operates from -55°C to 150°C with a 1.1V threshold voltage. Surface mount package with 10ns fall time and 830pF input capacitance. RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIZ790DT-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
35A
Drain to Source Resistance
3.8mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.75mm
Input Capacitance
830pF
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
9.3mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
SkyFET®, TrenchFET®
Threshold Voltage
1.1V
Width
3.73mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIZ790DT-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIZ790DT-T1-GE3 to view detailed technical specifications.
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