Dual N-Channel MOSFET, 30V Vdss, 35A continuous drain current. Features low 3.8mR drain-to-source resistance and 48W max power dissipation. Operates from -55°C to 150°C with a 1.1V threshold voltage. Surface mount package with 10ns fall time and 830pF input capacitance. RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIZ790DT-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 830pF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9.3mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | SkyFET®, TrenchFET® |
| Threshold Voltage | 1.1V |
| Width | 3.73mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIZ790DT-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIZ790DT-T1-GE3 to view detailed technical specifications.
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