N-channel MOSFET with 30V drain-source voltage and 24A continuous drain current. Features low on-resistance of 3.2mΩ at 10V, 7.2mΩ maximum at 10V, and 3.9mΩ typical at 10V. Offers 100W maximum power dissipation and 1.83nF input capacitance. This surface-mount component operates from -55°C to 150°C and includes two N-channel FETs.
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Vishay SIZ900DT-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 24A |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.83nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.2mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Width | 5mm |
| RoHS | Compliant |
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