Dual N-channel MOSFET with 30V drain-source voltage and 16A continuous drain current. Features low 5.3mΩ drain-source resistance and 66W maximum power dissipation. Designed for surface mounting with a compact 6mm x 5mm x 0.75mm footprint. Operates across a wide temperature range from -55°C to 150°C, suitable for general-purpose power applications.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIZ902DT-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 5.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 790pF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIZ902DT-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIZ902DT-T1-GE3 to view detailed technical specifications.
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