Dual N-channel MOSFET featuring 30V drain-source voltage and 16A continuous drain current. Offers low 24mΩ drain-source on-resistance at 10V gate-source voltage, with a maximum power dissipation of 33W. This surface-mount component boasts fast switching speeds with an 8ns fall time and 14ns turn-off delay. Designed for efficient operation with a 435pF input capacitance and a wide operating temperature range of -55°C to 150°C.
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Vishay SIZ904DT-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 24mR |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 435pF |
| Lead Free | Lead Free |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 14ns |
| Width | 5mm |
| RoHS | Compliant |
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