Dual N-channel MOSFET featuring 30V drain-source voltage and 16A continuous drain current. Offers low 24mΩ drain-source on-resistance at 10V gate-source voltage, with a maximum power dissipation of 33W. This surface-mount component boasts fast switching speeds with an 8ns fall time and 14ns turn-off delay. Designed for efficient operation with a 435pF input capacitance and a wide operating temperature range of -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIZ904DT-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
16A
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
24mR
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.75mm
Input Capacitance
435pF
Lead Free
Lead Free
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
33W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
24mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
14ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIZ904DT-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIZ904DT-T1-GE3 to view detailed technical specifications.
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