The SIZ910DT-T1-GE3 is a 2 N-Channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 100W and a continuous drain current of 40A. The device is packaged in a surface mount configuration with a width of 5mm and a length of 6mm. The SIZ910DT-T1-GE3 is RoHS compliant and has a maximum drain to source resistance of 2.5mR.
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Vishay SIZ910DT-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.5nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.8mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIZ910DT-T1-GE3 to view detailed technical specifications.
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