N-channel MOSFET, 30V drain-source voltage, featuring low on-resistance of 12mΩ at 10V. This dual-channel device offers a continuous drain current of 28A and a maximum power dissipation of 100W. Designed for surface mounting with a compact 6mm x 5mm x 0.75mm footprint, it operates across a wide temperature range from -55°C to 150°C. RoHS compliant and utilizing TrenchFET® technology, it includes a 1.2V threshold voltage and 790pF input capacitance.
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Vishay SIZ918DT-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 28A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 790pF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 40ns |
| Width | 5mm |
| RoHS | Compliant |
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