The SMAJ13A-E3/2G is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 15.9V and a maximum non-repetitive peak reverse power dissipation of 400mW. It has a JEDEC package code of DO-214AC and a 2-pin configuration. The diode element is made of silicon and has a terminal position of dual. The device is suitable for use in applications requiring transient voltage suppression.
Sign in to ask questions about the Vishay SMAJ13A-E3/2G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SMAJ13A-E3/2G technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AC |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 13 |
| Breakdown Voltage-Min | 14.4 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Breakdown Voltage-Max | 15.9 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Vishay SMAJ13A-E3/2G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.