P-channel TrenchFET® MOSFET, surface mountable in a SOT-23-3 package. Features a -40V drain-to-source breakdown voltage and a continuous drain current of -4.6A. Offers a low on-resistance of 75mR at a 10V gate-to-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3W. RoHS compliant and lead-free.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power3W
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Technical Specifications
Vishay SQ2319ES-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
-4.6A
Drain to Source Breakdown Voltage
-40V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
-40V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
620pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
75mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2V
Turn-Off Delay Time
25ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQ2319ES-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ2319ES-T1-GE3 to view detailed technical specifications.
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