P-channel TrenchFET® MOSFET, surface mountable in a SOT-23-3 package. Features a -40V drain-to-source breakdown voltage and a continuous drain current of -4.6A. Offers a low on-resistance of 75mR at a 10V gate-to-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3W. RoHS compliant and lead-free.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power3W
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Technical Specifications
Vishay SQ2319ES-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | -4.6A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQ2319ES-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ2319ES-T1-GE3 to view detailed technical specifications.
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